gap3s h t33 - ca u dec 2014 http://www.genesicsemi.com/index.php/hit - sic/baredie pg 1 of 2 silicon carbide power schottky diode chip features ? 33 00 v schottky rectifier ? 175 c maximum operating temperature ? electrically isolated base - plate ? positive temperature coefficient of v f ? f ast switching speeds ? superior figure of merit q c /i f advantages applications ? improved circuit efficiency (lower overall cost) ? significantly reduced switching losses compare to si pin diodes ? ease of paralleling devices without thermal runaway ? smaller heat sink requirements ? low reverse recovery current ? l ow device capacitance ? down hole oil drilling, geothermal instrumentation ? high voltage multipliers ? military power supplies maximum ratings at t j = 175 c, unless otherwise specified parameter symbol conditions values unit repetitive peak reverse voltage v rrm 33 00 v continuous forward current i f t c 1 25 c 0. 3 a rms forward current i f(rms) t c 1 25 c 0. 35 a surge non - repetitive forward current, half sine wave i f,sm t c = 25 c, t p = 10 ms tbd a t c = 1 25 c, t p = 10 ms tbd non - repetitive peak forward current i f,max t c = 25 c, t p = 10 s tbd a i 2 t value 2 dt t c = 25 c, t p = 10 ms tbd a 2 s power dissipation p tot t c = 25 c 25 w operating and storage temperature t j , t stg - 55 to 175 c electrical characteristics at t j = 175 c, unless otherwise specified parameter symbol conditions values unit m in . t yp . m ax . diode forward voltage v f i f = 0. 3 a, t j = 25 c 1 . 7 v i f = 0. 3 a, t j = 175 c 3 . 9 reverse current i r v r = 33 00 v, t j = 25 c 1 .3 5 a v r = 33 00 v, t j = 17 5 c 14 2 0 total capacitive charge q c i f i f,max d i f /dt = 35 a/s t j = 175 c v r = 15 00 v 20 nc switching time t s v r = 15 00 v < 60 ns total capacitance c v r = 1 v, f = 1 m hz, t j = 25 c 42 pf v r = 400 v, f = 1 m hz, t j = 25 c 8 v r = 1000 v, f = 1 m hz, t j = 25 c 7 *for chip size and metallization, please refer to the mechanical datasheet (must have a non - disclosure agreement with genesic semiconductor). v rrm = 33 00 v v f = 1.7 v i f = 0.3 a q c = 20 nc
gap3s h t33 - ca u dec 2014 http://www.genesicsemi.com/index.php/hit - sic/baredie pg 2 of 2 figure 1: typical forward characteristics figure 2: typical reverse characteristics figure 3 : typical junction capacitance vs reverse voltage characteristic s figure 4 : typical switching energy vs reverse voltage characteristic s revision history date revision comments supersedes 2014/12/19 1 updated electrical characteristics 2013/09/09 0 initial release published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 genesic semiconductor, inc. reserves right to make changes to the product specifications and data in this document without no tice . genesic disclaims all and any warranty and liability arising out of use or application of any product. no license, express or implied to any intellectual property rights is granted by this document. unless otherwise expressly indicated, genesic products are not designed, tested or authorized for use in life - saving, medical, aircraft n avigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in deat h, personal injury and/or property damage.
gap3s h t33 - ca u sept 2013 http://www.genesicsemi.com/index.php/hit - sic/baredie pg 1 of 1 spice model parameters copy the following code into a spice software pr ogram for simulation of the gap 3 s h t 33 - ca u device. * model of genesic semiconductor inc. * * $revision: 1.0 $ * $date: 0 9 - sep - 2013 $ * * genesic semiconductor inc. * 43670 trade center place ste. 155 * dulles, va 20166 * http://www.genesicsemi.com/index.php/hit - sic/baredie * * copyright (c) 2013 genesic semiconductor inc. * all rights reserved * * these models are provided "as is, where is, and with no warranty * of any kind eit her expressed or implied, including but not limited * to any implied warranties of merchantability and fitness for a * particular purpose." * models accurate up to 2 times rated drain current. * * start of gap3sht33 - ca u spice model * .subckt gap3sht33 anode kathode r1 anode int r=((temp - 24)*0.0535) d1 int kathode gap3sht33 _25c; d2 anode kathode gap3sht33 _pin; .model gap3sht33 _25c d + is 1.39e - 14 rs 2.88 + n 1.0120127 ikf 36.05007504 + eg 1.2 xti - 3 + cjo 6.01e - 11 vj 0.924257443 + m 0.3084545 fc 0.5 + tt 1.00e - 10 bv 3700 + ibv 1.00e - 03 vpk 3300 + iave 3.00e - 01 type sic_schottky + mfg genesic_semiconductor .model gap3sht33 _pin d + is 178.99e - 18 rs 15 + n 5 eg 3.23 + xti 50 fc 0.5 + tt 0 bv 3700 + ibv 1.00e - 03 vpk 3300 + iave 3.00e - 01 type sic_pin .ends * end of gap3sht33 - ca u spice model
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